Print Page
IGLR70R200D2SXUMA1
Gallium Nitride (GaN) Transistor, 700 V, 9.3 A, 0.24 ohm, 1.26 nC, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IGLR70R200D2SXUMA1Copy |
| Manufacturer Standard Lead Time | 24 weeks |
| Order Code | Re-Reel4694674RL Cut Tape4694674 |
| Product Range | CoolGaN G5 Series |
| Also Known As | IGLR70R200D2S, SP006123208 |
| Your Part Number | |
| Technical Datasheet |
4,878 In Stock
Need more?
4,878 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php155.300 | Php155.30 |
| Total Price | Php155.30 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Php155.300 |
| 10+ | Php95.000 |
| 100+ | Php67.500 |
| 500+ | Php54.500 |
| 1000+ | Php49.100 |
| 5000+ | Php46.400 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IGLR70R200D2SXUMA1Copy |
| Manufacturer Standard Lead Time | 24 weeks |
| Order Code | Re-Reel4694674RL Cut Tape4694674 |
| Product Range | CoolGaN G5 Series |
| Also Known As | IGLR70R200D2S, SP006123208 |
| Technical Datasheet | |
| Drain Source Voltage Vds | 700V |
| Continuous Drain Current Id | 9.3A |
| Drain Source On State Resistance | 0.24ohm |
| Typical Gate Charge | 1.26nC |
| Transistor Case Style | TSON |
| Transistor Mounting | Surface Mount |
| No. of Pins | 8Pins |
| Product Range | CoolGaN G5 Series |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
IGLR70R200D2SXUMA1 is a CoolGaN™ G5 highly efficient gallium nitride (GaN) transistor designed for power conversion at 700V. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using 200mm (8-inch) wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. It is ideal for consumer applications like chargers, adapters, TV power, and home appliances.
- Qualified according to JEDEC standard, 2kV HBM ESD standards
- Enhancement mode transistor, ultra‑fast switching, no reverse‑recovery charge
- Capable of reverse conduction, low gate and output charge, superior commutation ruggedness
- Normally OFF transistor technology ensures safe operation
- Enables rapid and precise power delivery control
- Improves system efficiency and reliability
- Ensures robust performance under challenging conditions
- Drain‑source on‑state resistance is 0.2ohm typ at IG =7.1mA; ID =2.1A; Tj =25°C
- PG‑TSON‑8 package
- Operating junction temperature range from ‑40 to 150°C
Technical Specifications
| Drain Source Voltage Vds | 700V |
|---|---|
| Drain Source On State Resistance | 0.24ohm |
| Transistor Case Style | TSON |
| No. of Pins | 8Pins |
| Qualification | - |
| Continuous Drain Current Id | 9.3A |
|---|---|
| Typical Gate Charge | 1.26nC |
| Transistor Mounting | Surface Mount |
| Product Range | CoolGaN G5 Series |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Malaysia Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000001 |