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IGB110S101XTMA1
Gallium Nitride (GaN) Transistor, 100 V, 23 A, 0.011 ohm, 3.4 nC, VSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGB110S101XTMA1
Order Code4667115RL
Also Known AsIGB110S101, SP005751574
Your Part Number
Technical Datasheet
3,080 In Stock
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3080 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | Php63.500 |
| 500+ | Php53.900 |
| 1000+ | Php46.100 |
| 5000+ | Php41.100 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Php6,350.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.011ohm
No. of Pins
4Pins
Continuous Drain Current Id
23A
Typical Gate Charge
3.4nC
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001