BGS12P2L6E6327XTSA1

BGS12P2L6E6327XTSA1 is a SPDT general purpose RF MOS power switch, designed to cover a broad range of high power applications from 0.05 to 6GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12P2L6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• Low current consumption, on-chip control logic, high port-to-port isolation
• RF CMOS SPDT antenna switch with power handling capability of up to 37dBm (at VSWR 1:1/50 ohm)
• Low insertion loss and harmonics generation
• No blocking capacitors required if no DC applied on RF lines
• No power supply decoupling required, high EMI robustness
• Supply voltage range from 1.65 to 3.4V at TA=-40°C to +85°C
• Supply current is 65µA typ at operating state, TA=-40°C to +85°C, VDD=1.65V to 3.4V
• TSLP-6-4 ultra low profile leadless plastic package
• Ambient temperature range from -40 to 85°C

Warnings

Stresses above the maximum values listed here may cause permanent damage to the device.