BFP842ESDH6327XTSA1
Bipolar - RF Transistor, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, SOT-343
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP842ESDH6327XTSA1Copy |
| Manufacturer Standard Lead Time | 35 weeks |
| Order Code | Re-Reel2480677RL Cut Tape2480677 |
| Also Known As | BFP 842ESD H6327, SP000943012 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php50.000 | Php50.00 |
| Total Price | Php50.00 | ||
| Quantity | Price |
|---|---|
| 1+ | Php50.000 |
| 10+ | Php30.600 |
| 100+ | Php21.500 |
| 500+ | Php18.000 |
| 1000+ | Php16.400 |
| 5000+ | Php13.300 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP842ESDH6327XTSA1Copy |
| Manufacturer Standard Lead Time | 35 weeks |
| Order Code | Re-Reel2480677RL Cut Tape2480677 |
| Also Known As | BFP 842ESD H6327, SP000943012 |
| Technical Datasheet | |
| Transistor Polarity | NPN |
| Collector Emitter Voltage Max | 3.25V |
| Transition Frequency | 57GHz |
| Power Dissipation | 120mW |
| Continuous Collector Current | 40mA |
| Transistor Case Style | SOT-343 |
| No. of Pins | 4Pins |
| DC Current Gain hFE Min | 150hFE |
| Transistor Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The BFP 842ESD H6327 is a high performance Hetero-junction Bipolar Transistor specifically designed for 2.3 to 3.5GHz LNA applications. The device is based upon the reliable high volume silicon germanium carbon technology of Infineon. It provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5GHz. The simultaneous noise and power match without loss external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery-powered applications in which energy efficiency is a key requirement.
- Robust very low-noise amplifier
- Unique combination of high end RF performance and robustness
- Low power consumption
- Easy to use
- Halogen-free
Applications
Industrial, Power Management, Wireless
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
| Transistor Polarity | NPN |
|---|---|
| Transition Frequency | 57GHz |
| Continuous Collector Current | 40mA |
| No. of Pins | 4Pins |
| Transistor Mounting | Surface Mount |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Collector Emitter Voltage Max | 3.25V |
|---|---|
| Power Dissipation | 120mW |
| Transistor Case Style | SOT-343 |
| DC Current Gain hFE Min | 150hFE |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000318 |