BFP840FESDH6327XTSA1
Bipolar - RF Transistor, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, TSFP
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP840FESDH6327XTSA1Copy |
| Manufacturer Standard Lead Time | 20 weeks |
| Order Code | Re-Reel2480676RL Cut Tape2480676 |
| Also Known As | BFP 840FESD H6327, SP000977846 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | Php22.900 | Php114.50 |
| Total Price | Php114.50 | ||
| Quantity | Price |
|---|---|
| 5+ | Php22.900 |
| 50+ | Php20.700 |
| 100+ | Php18.500 |
| 500+ | Php17.000 |
| 1500+ | Php16.700 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP840FESDH6327XTSA1Copy |
| Manufacturer Standard Lead Time | 20 weeks |
| Order Code | Re-Reel2480676RL Cut Tape2480676 |
| Also Known As | BFP 840FESD H6327, SP000977846 |
| Technical Datasheet | |
| Transistor Polarity | NPN |
| Collector Emitter Voltage Max | 2.25V |
| Transition Frequency | 85GHz |
| Power Dissipation | 75mW |
| Continuous Collector Current | 35mA |
| Transistor Case Style | TSFP |
| No. of Pins | 4Pins |
| DC Current Gain hFE Min | 150hFE |
| Transistor Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The BFP 840FESD H6327 is a high performance Hetero-junction Bipolar Transistor specifically designed for 5 to 6GHz Wi-Fi applications. The device is based on Infineon‘s reliable high volume silicon germanium carbon technology. It provides inherently good input and output power match as well as inherently good noise match at 5 to 6GHz. The simultaneous noise and power match without loss external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi application. Integrated protection elements at in and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery powered applications in which energy efficiency is a key requirement.
- Robust ultra low-noise amplifier
- Unique combination of high end RF performance and robustness
- Low power consumption
- Halogen-free
Applications
Industrial, Power Management, Wireless
Technical Specifications
| Transistor Polarity | NPN |
|---|---|
| Transition Frequency | 85GHz |
| Continuous Collector Current | 35mA |
| No. of Pins | 4Pins |
| Transistor Mounting | Surface Mount |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Collector Emitter Voltage Max | 2.25V |
|---|---|
| Power Dissipation | 75mW |
| Transistor Case Style | TSFP |
| DC Current Gain hFE Min | 150hFE |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .003175 |