BFP740FESDH6327XTSA1
Bipolar - RF Transistor, NPN, 4.2 V, 47 GHz, 160 mW, 45 mA, TSFP
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP740FESDH6327XTSA1Copy |
| Order Code | 2480674 |
| Also Known As | BFP 740FESD H6327, SP000890036 |
| Your Part Number | |
| Technical Datasheet |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP740FESDH6327XTSA1Copy |
| Order Code | 2480674 |
| Also Known As | BFP 740FESD H6327, SP000890036 |
| Technical Datasheet | |
| Transistor Polarity | NPN |
| Collector Emitter Voltage Max | 4.2V |
| Transition Frequency | 47GHz |
| Power Dissipation | 160mW |
| Continuous Collector Current | 45mA |
| Transistor Case Style | TSFP |
| No. of Pins | 4Pins |
| DC Current Gain hFE Min | 160hFE |
| Transistor Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (21-Jan-2025) |
Product Overview
The BFP 740FESD H6327 is a NPN very low-noise wideband Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 47GHz, hence the device offers high power gain at frequencies up to 12GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.
- 2kV ESD robustness (HBM) due to integrated protection circuits
- Halogen-free
Applications
Industrial, RF Communications, Power Management
Technical Specifications
| Transistor Polarity | NPN |
|---|---|
| Transition Frequency | 47GHz |
| Continuous Collector Current | 45mA |
| No. of Pins | 4Pins |
| Transistor Mounting | Surface Mount |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Collector Emitter Voltage Max | 4.2V |
|---|---|
| Power Dissipation | 160mW |
| Transistor Case Style | TSFP |
| DC Current Gain hFE Min | 160hFE |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (21-Jan-2025) |
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (21-Jan-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000008 |