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BFP420FH6327XTSA1
Bipolar - RF Transistor, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, TSFP
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP420FH6327XTSA1Copy |
| Order Code | 2480666 |
| Also Known As | BFP 420F H6327, SP000745268 |
| Your Part Number | |
| Technical Datasheet |
No Longer Manufactured
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | BFP420FH6327XTSA1Copy |
| Order Code | 2480666 |
| Also Known As | BFP 420F H6327, SP000745268 |
| Technical Datasheet | |
| Transistor Polarity | NPN |
| Collector Emitter Voltage Max | 4.5V |
| Transition Frequency | 25GHz |
| Power Dissipation | 210mW |
| Continuous Collector Current | 60mA |
| Transistor Case Style | TSFP |
| No. of Pins | 4Pins |
| DC Current Gain hFE Min | 60hFE |
| Transistor Mounting | Surface Mount |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (21-Jan-2025) |
Product Overview
The BFP 420F H6327 is a NPN wideband silicon Bipolar RF Transistor designed for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 25GHz, hence the device offers high power gain at frequencies up to 4.5GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.
- General purpose low-noise transistor
- Based on Infineon ́s reliable very high volume 25GHz silicon bipolar technology
- Popular in discrete oscillators
- Thin, small and flat with visible leads
- Halogen-free
Applications
Industrial, RF Communications, Power Management
Technical Specifications
| Transistor Polarity | NPN |
|---|---|
| Transition Frequency | 25GHz |
| Continuous Collector Current | 60mA |
| No. of Pins | 4Pins |
| Transistor Mounting | Surface Mount |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Collector Emitter Voltage Max | 4.5V |
|---|---|
| Power Dissipation | 210mW |
| Transistor Case Style | TSFP |
| DC Current Gain hFE Min | 60hFE |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (21-Jan-2025) |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412100 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (21-Jan-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000008 |