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ZXMHC3F381N8TC
Dual MOSFET, H-Bridge, Complementary N and P Channel, 30 V, 30 V, 3.98 A, 3.98 A, 0.033 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoZXMHC3F381N8TC
Order Code
Re-Reel2061507RL
Cut Tape2061507
Your Part Number
1,366 In Stock
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1366 Delivery in 3-4 Business Days(UK stock)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | Php65.300 |
| 50+ | Php54.400 |
| 100+ | Php43.200 |
| 500+ | Php36.900 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMHC3F381N8TC
Order Code
Re-Reel2061507RL
Cut Tape2061507
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.98A
Continuous Drain Current Id P Channel3.98A
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel0.033ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel870mW
Power Dissipation P Channel870mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The ZXMHC3F381N8TC is a N/P-channel complementary enhancement-mode MOSFET H-Bridge offers low ON-resistance achievable with low gate drive. It is ideal for DC to AC inverter applications.
Applications
Industrial, Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.98A
Drain Source On State Resistance P Channel
0.033ohm
No. of Pins
8Pins
Power Dissipation P Channel
870mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.98A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
870mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000302