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MMBTH10Q-7-F

Bipolar - RF Transistor, NPN, 25 V, 650 MHz, 310 mW, 50 mA, SOT-23

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Manufacturer	DIODES INC.
Manufacturer Part No	MMBTH10Q-7-FCopy
Manufacturer Standard Lead Time	43 weeks
Order Code	Cut Tape3944196 Cut Tape3944196RL
Your Part Number
Technical Datasheet	Data Sheet See all Technical Docs

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Manufacturer	DIODES INC.
Manufacturer Part No	MMBTH10Q-7-FCopy
Manufacturer Standard Lead Time	43 weeks
Order Code	Cut Tape3944196 Cut Tape3944196RL
Technical Datasheet	Data Sheet
Transistor Polarity	NPN
Collector Emitter Voltage Max	25V
Transition Frequency	650MHz
Power Dissipation	310mW
Continuous Collector Current	50mA
Transistor Case Style	SOT-23
No. of Pins	3Pins
DC Current Gain hFE Min	60hFE
Transistor Mounting	Surface Mount
Operating Temperature Max	150°C
Product Range	-
Qualification	AEC-Q101
SVHC	No SVHC (04-Feb-2026)

Transistor Polarity	NPN
Transition Frequency	650MHz
Continuous Collector Current	50mA
No. of Pins	3Pins
Transistor Mounting	Surface Mount
Product Range	-
SVHC	No SVHC (04-Feb-2026)

Collector Emitter Voltage Max	25V
Power Dissipation	310mW
Transistor Case Style	SOT-23
DC Current Gain hFE Min	60hFE
Operating Temperature Max	150°C
Qualification	AEC-Q101

MMBTH10Q-7-F Data Sheet

Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin:	United States Country in which last significant manufacturing process was carried out
Tariff No:	85412100
US ECCN:	EAR99
EU ECCN:	NLR
RoHS Compliant:	Yes RoHS
RoHS Phthalates Compliant:	Yes RoHS
SVHC:	No SVHC (04-Feb-2026)
Download Product Compliance Certificate	Product Compliance Certificate
Weight (kg):	.000001