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DMN61D8LVTQ-7
Dual MOSFET, N Channel, 60 V, 60 V, 630 mA, 630 mA, 1.8 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN61D8LVTQ-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944129RL
Cut Tape3944129
Your Part Number
4 In Stock
6,000 more incoming. You can reserve stock now
4 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | Php59.900 | Php59.90 |
| Total Price | Php59.90 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Php59.900 |
| 10+ | Php39.600 |
| 100+ | Php23.900 |
| 500+ | Php18.200 |
| 1000+ | Php17.900 |
| 5000+ | Php17.500 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN61D8LVTQ-7Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel3944129RL
Cut Tape3944129
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id630mA
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel630mA
On Resistance Rds(on)1.1ohm
Continuous Drain Current Id P Channel630mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.8ohm
Rds(on) Test Voltage5V
Drain Source On State Resistance P Channel-
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max2V
No. of Pins6Pins
Power Dissipation Pd1.09W
Power Dissipation N Channel1.09W
Power Dissipation P Channel1.09W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
630mA
Continuous Drain Current Id N Channel
630mA
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance N Channel
1.8ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
1.09W
Power Dissipation P Channel
1.09W
Product Range
-
Automotive Qualification Standard
AEC-Q101
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
1.1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
5V
Transistor Case Style
TSOT-26
No. of Pins
6Pins
Power Dissipation N Channel
1.09W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001