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DMG301NU-13
Power MOSFET, N Channel, 25 V, 260 mA, 4 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMG301NU-13
Order Code3127317RL
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 10+ | Php7.800 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
Php780.00
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG301NU-13
Order Code3127317RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id260mA
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.1V
Power Dissipation320mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
DMG301NU-13 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface mount package, ESD protected gate (>6kV human body model)
- Drain-source voltage is 25V at TA=+25°C
- Gate-source voltage is 8V at TA=+25°C
- Pulsed drain current (10µS pulse, duty cycle=1%) is 1.5A at TA=+25°C
- Maximum body diode forward current is 0.5A at TA=+25°C
- Total power dissipation is 0.32W
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
260mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
320mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145