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SQJ910AEP-T1_GE3
Dual MOSFET, N Channel, 30 V, 30 V, 30 A, 30 A, 5800 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJ910AEP-T1_GE3
Order Code3772866RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Php55.700 |
| 500+ | Php44.100 |
| 1000+ | Php35.600 |
| 5000+ | Php33.900 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Php5,570.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ910AEP-T1_GE3
Order Code3772866RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id30A
On Resistance Rds(on)0.0058ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel5800µohm
Drain Source On State Resistance P Channel5800µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max2V
Power Dissipation Pd48W
No. of Pins4Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0058ohm
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
5800µohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Power Dissipation P Channel
48W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
30A
Continuous Drain Current Id N Channel
30A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
5800µohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
48W
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001