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SQ1912AEEH-T1_GE3
Dual MOSFET, N Channel, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ1912AEEH-T1_GE3
Order Code3470705RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | Php19.600 |
| 500+ | Php18.700 |
| 1000+ | Php17.700 |
| 5000+ | Php17.000 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
Php1,960.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ1912AEEH-T1_GE3
Order Code3470705RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id800mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.2ohm
Continuous Drain Current Id N Channel800mA
Continuous Drain Current Id P Channel800mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.2ohm
Drain Source On State Resistance P Channel0.2ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max600mV
Power Dissipation Pd1.5W
No. of Pins6Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
800mA
On Resistance Rds(on)
0.2ohm
Continuous Drain Current Id P Channel
800mA
Drain Source On State Resistance N Channel
0.2ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Power Dissipation P Channel
1.5W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
800mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.2ohm
Transistor Case Style
SC-70
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001