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RTP100E2P6G1FL-TR
Gallium Nitride (GaN) Transistor, 100 V, 113 A, 0.0026 ohm, 9.4 nC, FCLGA, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | Php174.600 |
| 5+ | Php149.400 |
| 10+ | Php123.300 |
| 50+ | Php116.600 |
| 100+ | Php108.500 |
| 250+ | Php106.200 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Php174.60
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerRENESAS
Manufacturer Part NoRTP100E2P6G1FL-TRCopy
Order Code5128703
Drain Source Voltage Vds100V
Continuous Drain Current Id113A
Drain Source On State Resistance0.0026ohm
Typical Gate Charge9.4nC
Transistor Case StyleFCLGA
Transistor MountingSurface Mount
No. of Pins8Pins
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0026ohm
Transistor Case Style
FCLGA
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
113A
Typical Gate Charge
9.4nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001