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IPB042N10N3GATMA1
Power MOSFET, N Channel, 100 V, 100 A, 4200 µohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB042N10N3GATMA1Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel2443431RL
Cut Tape2443431
Also Known AsIPB042N10N3 G, SP000446880
Your Part Number
1,140 In Stock
2,000 more incoming. You can reserve stock now
1,140 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | Php254.700 | Php254.70 |
| Total Price | Php254.70 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | Php254.700 |
| 10+ | Php166.100 |
| 50+ | Php116.600 |
| 200+ | Php107.600 |
| 500+ | Php98.100 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB042N10N3GATMA1Copy
Manufacturer Standard Lead Time42 weeks
Order Code
Re-Reel2443431RL
Cut Tape2443431
Also Known AsIPB042N10N3 G, SP000446880
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id100A
Drain Source On State Resistance4200µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
100V Optima's™ 3 power-transistorIdeal for high frequency switching and synchronous rectification.
- N-channel, normal level
- Excellent gate charge xRDS(on) product (FOM)
- Very low on-resistance RDS(on)
- Excellent switching performance
- World’s lowest R DS(on)
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
4200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181