Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

NTHL040N120M3S	4143105 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 51 A 1.2 kV 0.052 ohm TO-247	Each	1+Php702.900 5+Php605.300 10+Php521.600	-	N Channel	51A	1.2kV	0.052ohm	TO-247	3Pins	18V	4.4V	329W	175°C	-
IMZA120R022M2HXKSA1	4717035 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 80 A 1.2 kV 0.029 ohm TO-247	Each	1+Php1,108.400 5+Php896.000 10+Php683.600 50+Php656.600 100+Php629.600 More Pricing...	Single	N Channel	80A	1.2kV	0.029ohm	TO-247	4Pins	18V	5.1V	329W	150°C	CoolSiC Series
IMZC120R022M2HXKSA1	4574251 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 80 A 1.2 kV 0.022 ohm TO-247	Each	1+Php1,191.600 5+Php1,006.200 10+Php820.400 50+Php764.600 100+Php708.300 More Pricing...	Single	N Channel	80A	1.2kV	0.022ohm	TO-247	4Pins	18V	5.1V	329W	175°C	CoolSiC Gen 2 Series
NTBG040N120M3S	4244649 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 51 A 1.2 kV 0.052 ohm D2PAK-7L	Each (Supplied on Cut Tape) Cut Tape	1+Php1,136.300 10+Php800.600 50+Php733.100 100+Php664.700 250+Php651.200	-	N Channel	51A	1.2kV	0.052ohm	D2PAK-7L	7Pins	18V	4.4V	329W	175°C	EliteSiC Series
NTBG040N120M3S	4143095 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 51 A 1.2 kV 0.052 ohm D2PAK-7L	Each	1+Php1,231.200 5+Php1,077.300 10+Php892.400 50+Php800.600 100+Php738.900 More Pricing...	-	N Channel	51A	1.2kV	0.052ohm	D2PAK-7L	7Pins	18V	4.4V	329W	175°C	-
NTH4L040N120M3S	4143100 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 51 A 1.2 kV 0.052 ohm TO-247	Each	30+Php789.300	-	N Channel	51A	1.2kV	0.052ohm	TO-247	4Pins	18V	4.4V	329W	175°C	-