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BYV28-100-TAP
BYV28-100-TAP - Fast / Ultrafast Diode, 110 V, 3.5 A, Single, 1.1 V, 30 ns, 90 A

1612307

Fast / Ultrafast Diode, 110 V, 3.5 A, Single, 1.1 V, 30 ns, 90 A

VISHAY

DIODE, ULTRAFAST, 3.5 A, SOD-64; Repetitive Reverse Voltage Vrrm Max:110V; Forward Current If(AV):3.5A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:30ns; Forward Surge Current Ifsm Max:90A; Operating Temperature

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1N4733A
1N4733A - Zener Single Diode, 5.1 V, 1.3 W, DO-41 (DO-204AL), 2 Pins, 175 °C

1612363

Zener Single Diode, 5.1 V, 1.3 W, DO-41 (DO-204AL), 2 Pins, 175 °C

VISHAY

Zener Voltage Vz Typ:5.1V; Power Dissipation Pd:1.3W; Diode Case Style:DO-41 (DO-204AL); Zener Tolerance ±:5%; No. of Pins:2Pins; Operating Temperature Max:200°C; Product Range:1N47xxA Series; Automotiv

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IRF540PBF
IRF540PBF - Power MOSFET, N Channel, 100 V, 28 A, 0.077 ohm, TO-220AB, Through Hole

1653661

Power MOSFET, N Channel, 100 V, 28 A, 0.077 ohm, TO-220AB, Through Hole

VISHAY

MOSFET, N, 100V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; Transistor Cas

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IRF740PBF
IRF740PBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

1653662

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Ca

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IRF9630PBF
IRF9630PBF - Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole

1653665

Power MOSFET, P Channel, 200 V, 6.5 A, 0.8 ohm, TO-220AB, Through Hole

VISHAY

TRANSISTOR, MOSFET, POLARITY P; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:74W; Transistor

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FDN335N
FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount

9845348

Power MOSFET, N Channel, 20 V, 1.7 A, 0.07 ohm, SOT-23, Surface Mount

ONSEMI

MOSFET, N, 20V, 1.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power Dissipation Pd:500mW; Transistor

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2N5551
2N5551 - Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole

9846751

Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole

ONSEMI

TRANSISTOR, NPN, 160V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:150MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Style:TO-92; No. of Pins:3P

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BAT54JFILM
BAT54JFILM - Small Signal Schottky Diode, Single, 40 V, 300 mA, 400 mV, 1.25 A, 150 °C

9801502RL

Small Signal Schottky Diode, Single, 40 V, 300 mA, 400 mV, 1.25 A, 150 °C

STMICROELECTRONICS

DIODE, SCHOTTKY, 40V, 300MA, SOD-323; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):300mA; Forward Voltage VF Max:400mV; Forward Surge Current Ifsm Max:1A; Operating Temperat

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IRF9Z34NPBF
IRF9Z34NPBF - Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

8648689

Power MOSFET, P Channel, 55 V, 17 A, 0.1 ohm, TO-220AB, Through Hole

INFINEON

MOSFET, P, -55V, -17A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:56W; Transistor Cas

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1N4148W-7-F
1N4148W-7-F - Small Signal Diode, Single, 100 V, 300 mA, 1.25 V, 4 ns, 2 A

1776392RL

Small Signal Diode, Single, 100 V, 300 mA, 1.25 V, 4 ns, 2 A

DIODES INC.

DIODE, SWITCH, 300MA, 100V,SOD123; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):300mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Curren

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BC108
BC108 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 200 mA, 600 mW, TO-18, Through Hole

9206736

Bipolar (BJT) Single Transistor, General Purpose, NPN, 25 V, 200 mA, 600 mW, TO-18, Through Hole

MULTICOMP PRO

TRANSISTOR, NPN, 25V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:200mA; DC Current Gain hFE:110hFE; Transistor Case Style:TO-18; No. of Pins:3Pi

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DFLS1200-7
DFLS1200-7 - Schottky Rectifier, POWERDI®, 200 V, 1 A, Single, PowerDI 123, 2 Pins, 850 mV

1713890RL

Schottky Rectifier, POWERDI®, 200 V, 1 A, Single, PowerDI 123, 2 Pins, 850 mV

DIODES INC.

DIODE, SCHOTTKY, 1A, 200V, POWERDI123; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:PowerDI 123; No. of Pins:2Pins; Forward Voltage VF Max:850mV; Forwa

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1713890 in Cut Tape

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MURA120T3G
MURA120T3G - Fast / Ultrafast Diode, 200 V, 1 A, Single, 875 mV, 35 ns, 40 A

1459147

Fast / Ultrafast Diode, 200 V, 1 A, Single, 875 mV, 35 ns, 40 A

ONSEMI

DIODE, FAST, 1A, 200V, SMA; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:875mV; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:40A; Operating Temperature Max:1

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2441594 in Full Reel

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1N4004G
1N4004G - Standard Recovery Diode, 400 V, 1 A, Single, 1.1 V, 30 A

1651084

Standard Recovery Diode, 400 V, 1 A, Single, 1.1 V, 30 A

ONSEMI

DIODE, PWR RECT, 1A, 400V, DO-41; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:30A; Operating Temperature Max

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MMBT5551LT1G
MMBT5551LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount

1459109

Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount

ONSEMI

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:-; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:80hFE; Transistor Case Sty

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MMSD914T1G
MMSD914T1G - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 500 mA

1459114

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 500 mA

ONSEMI

DIODE, SIGNAL, 100V, SOD-123; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm M

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1N4744A
1N4744A - Zener Single Diode, 15 V, 1.3 W, DO-41 (DO-204AL), 2 Pins, 200 °C

1612368

Zener Single Diode, 15 V, 1.3 W, DO-41 (DO-204AL), 2 Pins, 200 °C

VISHAY

Zener Voltage Vz Typ:15V; Power Dissipation Pd:1.3W; Diode Case Style:DO-41 (DO-204AL); Zener Tolerance ±:5%; No. of Pins:2Pins; Operating Temperature Max:200°C; Product Range:1N47xxA Series; Automotive

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FDV303N
FDV303N - Power MOSFET, N Channel, 25 V, 680 mA, 0.33 ohm, SOT-23, Surface Mount

9845020

Power MOSFET, N Channel, 25 V, 680 mA, 0.33 ohm, SOT-23, Surface Mount

ONSEMI

MOSFET, N,25V, 680MA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:680mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Pow

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2N2102
2N2102 - Bipolar (BJT) Single Transistor, NPN, 65 V, 1 A, 800 mW, TO-39, Through Hole

1611559

Bipolar (BJT) Single Transistor, NPN, 65 V, 1 A, 800 mW, TO-39, Through Hole

MULTICOMP PRO

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:60MHz; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-39; No. of Pins:3Pins; Operating Temperature Max:200°

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TIP31C
TIP31C - Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

9804145

Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 40 W, TO-220, Through Hole

STMICROELECTRONICS

TRANSISTOR, NPN, 100V, 3A, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-220; No. of Pins:3Pins;

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FDLL4148
FDLL4148 - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

9843710

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

ONSEMI

DIODE, HIGH SPEED, 1A, 100V, LL-34; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current

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RHRP3060
RHRP3060 - Fast / Ultrafast Diode, Soft, 600 V, 30 A, Single, 2.1 V, 40 ns, 325 A

9843922

Fast / Ultrafast Diode, Soft, 600 V, 30 A, Single, 2.1 V, 40 ns, 325 A

ONSEMI

DIODE, SOFT RECOVERY, 30A; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Diode Configuration:Single; Forward Voltage VF Max:2.1V; Reverse Recovery Time trr Max:40ns; Forward Surge Current Ifsm Max:325A; Operating Temperature Max:1

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BZX79-C5V1
BZX79-C5V1 - Zener Single Diode, 5.1 V, 500 mW, DO-35, 2 Pins, 200 °C

9844619

Zener Single Diode, 5.1 V, 500 mW, DO-35, 2 Pins, 200 °C

ONSEMI

DIODE, ZENER, 5.1V, 500MW, DO-35; Zener Voltage Vz Typ:5.1V; Power Dissipation Pd:500mW; Diode Case Style:DO-35; Zener Tolerance ±:5%; No. of Pins:2Pins; Operating Temperature Max:200°C; Product Range:BZX79 Series; Autom

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BC107B
BC107B - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 600 mW, TO-18, Through Hole

9206779

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 mA, 600 mW, TO-18, Through Hole

MULTICOMP PRO

TRANSISTOR, NPN, 45V, 0.2A, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:TO-18; No. of Pi

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2N2222A
2N2222A - Single Bipolar Transistor (BJT), High Speed Switching, NPN, 40 V, 1.2 W, 800 mA, TO-18

9207120

Single Bipolar Transistor (BJT), High Speed Switching, NPN, 40 V, 1.2 W, 800 mA, TO-18

MULTICOMP PRO

TRANSISTOR, NPN, 40V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.2W; DC Collector Current:800mA; DC Current Gain hFE:30hFE; Transistor Case Style:TO-18; No. of Pin

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