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Evaluation Board, SiC MOSFET, 1.2kV, C2M0080120D

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Product Overview

The KIT8020-CRD-8FF1217P-1 is a silicon carbide MOSFET evaluation kit demonstrates high performance of CREE 1200V SiC MOSFET and SiC Schottky diodes (SBD) in standard TO-247 package. The EVL board can be used for following purposes such as evaluate SiC MOSFET performance during switching events and steady state operation, easily configure different topologies with SiC MOSFET and SiC diodes, functional testing with SiC MOSFET, PCB layout example for driving Cree MOSFET, gate drive reference design for a TO-247 packaged Cree MOSFET, comparative testing between Cree devices and IGBTs. There is a phase leg which can include 2 SiC MOSFETs (Q1 and Q2) with half bridge phase-leg configuration and 2 anti-parallel SiC schottky diodes (D1 and D3) with Q1 and Q2. The gate drive block with electrical isolation is designed on board to drive SiC MOSFET Q1 and Q2. There are 4 power trace connectors (CON1, CON2, CON3 and CON5) and one 10 pin signal/supply voltage connector (CON4) on board.
  • EVL board size is 124mm x 120mm x 40mm
  • Topologies tested synchronous and non-synchronous buck, synchronous and non-synchronous boost
  • Half phase-leg bridge, H bridge (2 x EVL boards) & bi-directional buck-boost converters


Power Management


1 CRD8FF1217P-1 Avago driver version EV board, 4 AOS2182471 ceramic tile, 1 57908 heat sink with mounting holes, 2 C2M0080120D 80mohm MOSFET, 2 C4D20120D 20A diode, 1 Copper shorting strip, 2 74270011 ferrite bead, 8 91166a210 M3 washer, Zn-S, 7mm OD, 3.2mm ID, 4 92005a129 M3x22mm, Zn-S, board mounting screw, 4 94669a727 stand offs, Al spacer, 6mm OD x 14mm, 4 92005a120 M3x10mm, Zn-S, device mounting screw

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Eval Board C2M0080120D


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