KIT8020-CRD-8FF1217P-1

The KIT8020-CRD-8FF1217P-1 is a silicon carbide MOSFET evaluation kit demonstrates high performance of CREE 1200V SiC MOSFET and SiC Schottky diodes (SBD) in standard TO-247 package. The EVL board can be used for following purposes such as evaluate SiC MOSFET performance during switching events and steady state operation, easily configure different topologies with SiC MOSFET and SiC diodes, functional testing with SiC MOSFET, PCB layout example for driving Cree MOSFET, gate drive reference design for a TO-247 packaged Cree MOSFET, comparative testing between Cree devices and IGBTs. There is a phase leg which can include 2 SiC MOSFETs (Q1 and Q2) with half bridge phase-leg configuration and 2 anti-parallel SiC schottky diodes (D1 and D3) with Q1 and Q2. The gate drive block with electrical isolation is designed on board to drive SiC MOSFET Q1 and Q2. There are 4 power trace connectors (CON1, CON2, CON3 and CON5) and one 10 pin signal/supply voltage connector (CON4) on board.