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TK11P65W,RQ(S
Power MOSFET, N Channel, 650 V, 11.1 A, 0.35 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTK11P65W,RQ(S
Order Code4173002
Also Known AsTK11P65W, TK11P65W,RQ
Technical Datasheet
1,400 In Stock
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1400 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | Php145.600 |
| 10+ | Php76.400 |
| 100+ | Php62.400 |
| 500+ | Php60.400 |
| 1000+ | Php57.600 |
| 5000+ | Php56.800 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
Php145.60
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK11P65W,RQ(S
Order Code4173002
Also Known AsTK11P65W, TK11P65W,RQ
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id11.1A
Drain Source On State Resistance0.35ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11.1A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
100W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.35ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00036