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MOSFET Configuration Channel Type Transistor Polarity Continuous Drain Current Id Drain Source Voltage Vds Drain Source On State Resistance On Resistance Rds(on) Transistor Case Style Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation Operating Temperature Max Product Range
 
 
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FF45MR12W1M1B11BOMA1
FF45MR12W1M1B11BOMA1 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 25 A, 1.2 kV, 0.045 ohm, Module

3267807

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 25 A, 1.2 kV, 0.045 ohm, Module

INFINEON

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1+ Php4,961.80

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Half Bridge Dual N Channel Dual N Channel 25A 1.2kV 0.045ohm 0.045ohm Module 15V 4.5V - 150°C EasyDUAL
FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1 - Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 100 A, 1.2 kV, 0.011 ohm, Module

2771412

Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 100 A, 1.2 kV, 0.011 ohm, Module

INFINEON

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1+ Php13,617.60

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- N Channel - - - 0.011ohm - - - - 20mW - -
FF23MR12W1M1B11BOMA1
FF23MR12W1M1B11BOMA1 - Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 50 A, 1.2 kV, 0.023 ohm, Module

2771413

Silicon Carbide MOSFET, EasyDual Module, Half Bridge, N Channel, 50 A, 1.2 kV, 0.023 ohm, Module

INFINEON

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1+ Php7,541.50

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- N Channel - - - 0.023ohm - - - - 20mW - -
FF6MR12W2M1B11BOMA1
FF6MR12W2M1B11BOMA1 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.00563 ohm, Module

3267808

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.00563 ohm, Module

INFINEON

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1+ Php22,803.90

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Half Bridge Dual N Channel Dual N Channel 200A 1.2kV 0.00563ohm 0.00563ohm Module 15V 4.5V - 150°C EasyDUAL
FF8MR12W2M1B11BOMA1
FF8MR12W2M1B11BOMA1 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 150 A, 1.2 kV, 0.0075 ohm, Module

3267809

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 150 A, 1.2 kV, 0.0075 ohm, Module

INFINEON

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1+ Php18,965.20

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Half Bridge Dual N Channel Dual N Channel 150A 1.2kV 0.0075ohm 0.0075ohm Module 15V 4.5V - 150°C EasyDUAL
FF6MR12W2M1PB11BPSA1
FF6MR12W2M1PB11BPSA1 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.00563 ohm, Module

3577293

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 200 A, 1.2 kV, 0.00563 ohm, Module

INFINEON

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1+ Php25,192.30

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Half Bridge Dual N Channel Dual N Channel 200A 1.2kV 0.00563ohm 0.00563ohm Module 15V 4.5V - 150°C EasyDUAL CoolSiC
FF8MR12W2M1PB11BPSA1
FF8MR12W2M1PB11BPSA1 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 150 A, 1.2 kV, 0.0075 ohm, Module

3577294

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 150 A, 1.2 kV, 0.0075 ohm, Module

INFINEON

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1+ Php17,951.00

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Half Bridge Dual N Channel Dual N Channel 150A 1.2kV 0.0075ohm 0.0075ohm Module 15V 4.5V - 150°C EasyDUAL CoolSiC
FF11MR12W1M1PB11BPSA1
FF11MR12W1M1PB11BPSA1 - Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 100 A, 1.2 kV, 0.0113 ohm, Module

3577291

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 100 A, 1.2 kV, 0.0113 ohm, Module

INFINEON

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1+ Php13,698.30

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Half Bridge Dual N Channel Dual N Channel 100A 1.2kV 0.0113ohm 0.0113ohm Module 15V 4.5V - 150°C EasyDUAL CoolSiC