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IPF010N04NF2SATMA1
Power MOSFET, N Channel, 40 V, 289 A, 870 µohm, TO-263, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPF010N04NF2SATMA1
Order Code4154485
Product RangeStrongIRFET 2 Series
Also Known AsSP005632929
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPF010N04NF2SATMA1
Order Code4154485
Product RangeStrongIRFET 2 Series
Also Known AsSP005632929
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id289A
Drain Source On State Resistance870µohm
Transistor Case StyleTO-263
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.4V
Power Dissipation250W
No. of Pins7Pins
Operating Temperature Max175°C
Product RangeStrongIRFET 2 Series
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
289A
Transistor Case Style
TO-263
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
870µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.4V
No. of Pins
7Pins
Product Range
StrongIRFET 2 Series
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001