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IKW25N120H3FKSA1

IGBT Single Transistor, 25 A, 2.4 V, 326 W, 1.2 kV, TO-247, 3 Pins

IKW25N120H3FKSA1 - IGBT Single Transistor, 25 A, 2.4 V, 326 W, 1.2 kV, TO-247, 3 Pins

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IKW25N120H3FKSA1
Order Code:
1832350
Also Known As:
IKW25N120H3, SP000674418
Technical Datasheet:
IKW25N120H3FKSA1   Datasheet
See all Technical Docs

Product Overview

The IKW25N120H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
  • Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
  • Low switching losses for high efficiency
  • Fast switching behaviour with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
  • Short-circuit capability
  • Excellent performance
  • Low switching and conduction losses
  • Very good EMI behaviour
  • Small gate resistor for reduced delay time and voltage overshoot
  • Best-in-class IGBT efficiency and EMI behaviour
  • Packaged with and without freewheeling diode for increased design freedom
  • Green product
  • Halogen-free

Applications

Power Management, Alternative Energy

Product Information

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:
25A

:
2.4V

:
326W

:
1.2kV

:
TO-247

:
3Pins

:
175°C

:
-

:
-

:
-
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Technical Docs (5)

Also Known As

IKW25N120H3, SP000674418

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