“CoolGaN is the best choice. Why?”

If you know Infineon as the leading supplier of superior quality power MOSFETs, you are totally right!

But this is only half of the story. For all its high voltage switches Infineon also offers perfectly matching gate driver ICs with all kind of configurations, voltage classes, isolation levels, protection features, and package options. As such, you as customers benefit from faster switching and optimized overall system performance.

Infineon’s gate driver ICs are developed leveraging the company’s application expertise and advanced tech-know-how ensuring that they are suited for a multitude of applications.

Given the trend towards higher power density in the high power SMPS market faster switches are needed. At the same time, ways must be found to deal with design challenges like parasitics, board limitations and possible thermal issues. With its CoolMOS™ superjunction MOSFETs (Silicon technology) and its newly launched CoolGaN™ (Gallium nitride technology) portfolios, Infineon offers solutions for overcoming exactly those challenges.

Pair up now and enjoy the convenience of getting all out of one expert’s hand!

Switches & Drivers based on Gallium nitride technology

CoolGaN™ 600 V e-mode HEMTs - Highest efficiency & density levels in SMPS

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With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e‑mode HEMT) portfolio with industry‑leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor‑made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application‑based qualification approach extends beyond that of other GaN products in the market.

High voltage GaN driving GaN EiceDRIVER™ gate driver ICs - 1‑channel galvanically-isolated gate drivers for enhancement mode GaN HEMTs

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Infineon’s newly launched GoolGaN™ switches portfolio is easy‑to‑use thanks to a perfectly matching gate driver IC portfolio. By introducing the GaN EiceDRIVER™ family Infineon extends its range of one‑channel galvanically‑isolated gate driver ICs. The new components with high gate current for fast turn‑on and robust gate‑drive topology have been developed to optimize the performance of enhancement mode GaN HEMTs with non‑isolated gate (diode input characteristic) and low threshold voltage. Resulting, driver complexity has been significantly reduced (medium effort for design‑in) as no more customized drivers are needed.

Switches & Drivers based on Silicon technology

Kelvin Source CoolMOS™ superjunction MOSFETs

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With CoolMOS™ SJ MOSFET products, Infineon is setting new standards for energy efficiency, power density and ease of use, boasting figures of merit in terms of conduction, switching and driving losses.

The broadest Silicon based superjunction MOSFET portfolio on the market impresses with wide RDS(on) granularity, best-in-class RDS(on) / package, highest efficiency with an optimized price/performance ratio and low EOSS, Qg.

600 V CoolMOS™ G7 SJ MOSFET and CoolSiC™ Schottky diode G6 in Double DPAK (DDPAK) package

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With 600 V CoolMOS™ SJ MOSFET G7 and 650 V CoolSiC™ Schottky diode G6 - both available in DDPAK package - Infineon provides a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. By combining the DDPAK offering with Infineon’s single-channel, low-side gate driver family with truly differential inputs (1EDN TDI) optimized system solutions for high power designs are enabled.

EiceDRIVER™ 1EDN7550 and 1EDN8550 single-channel, low-side, non-isolated gate driver ICs with truly differential inputs

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Infineon’s newly launched EiceDRIVER™ 1EDN7550 and 1EDN8550 single-channel, low-side, non-isolated gate driver ICs, have truly differential inputs. Hence, they are perfectly suited for SMPS with ground shift challenges. Characteristically, their control signal inputs are largely independent from the ground potential. Only the voltage difference between the input contacts is relevant. This prevents false triggering of power MOSFETs.