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A global leader in the GaN revolution, Transphorm manufactures the industry’s most robust GaN semiconductors with best-in-class reliability and performance. The high voltage SuperGaN® 650 V FET portfolio supports the widest range of power conversion ranging from 45 W to 10+ kW of power. Products built with SuperGaN FETs can achieve over 99% efficiency with 50% more power density and 20% lower system cost return.
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Transphorm holds one of the largest GaN IP portfolios (1,000+ patents) and operates as a vertically integrated business, allowing for control at each critical stage of device development: HEMT Design, EPI Wafer, Wafer Process, and GaN FET Die.
The company is headquartered in Goleta, California, and has manufacturing operations in Goleta and Aizu, Japan.
Call our dedicated team at or send us your requirements online.
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