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SEMIKRON  SK60GAL123  IGBT Array & Module Transistor, N Channel, 58 A, 3 V, 600 W, 1.2 kV, SEMITOP 2

SEMIKRON SK60GAL123
Technical Data Sheet (721.03KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
DC Collector Current:
58A
Collector Emitter Saturation Voltage Vce(on):
3V
Power Dissipation Pd:
600W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
SEMITOP 2
No. of Pins:
-
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Country of Origin:
Italy

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85359000
Weight (kg):
.12

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