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ON SEMICONDUCTOR  MJD47T4G  Bipolar (BJT) Single Transistor, NPN, 250 V, 10 MHz, 1.56 W, 1 A, 30 hFE

ON SEMICONDUCTOR MJD47T4G
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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
250V
Transition Frequency ft:
10MHz
Power Dissipation Pd:
1.56W
DC Collector Current:
1A
DC Current Gain hFE:
30hFE
Transistor Case Style:
TO-252
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, NPN, 250 V, 10 MHz, 1.56 W, 1 A, 30 hFE

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