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NXP  BST52,115  Bipolar (BJT) Single Transistor, Darlington, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 1000 hFE

NXP BST52,115
Technical Data Sheet (123.59KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
1.3W
DC Collector Current:
1A
DC Current Gain hFE:
1000hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, Darlington, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE

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