Low

INFINEON  IPB60R099CPATMA1  Power MOSFET, N Channel, 31 A, 650 V, 0.09 ohm, 10 V, 3 V

INFINEON IPB60R099CPATMA1
Technical Data Sheet (323.17KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
31A
Drain Source Voltage Vds:
650V
On Resistance Rds(on):
0.09ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
255W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143

Alternatives

Power MOSFET, N Channel, 29 A, 600 V, 0.097 ohm, 10 V, 4 V

STMICROELECTRONICS

193 in stock

Price for: Each

1+ Php567.10 10+ Php510.10 25+ Php464.70 50+ Php433.50 more…

Buy

Associated Products