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INFINEON  BSC340N08NS3GATMA1  MOSFET Transistor, N Channel, 23 A, 80 V, 0.0275 ohm, 10 V, 2.8 V

INFINEON BSC340N08NS3GATMA1
Technical Data Sheet (586.11KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSC340N08NS3 G is a 80V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
  • Dual sided cooling
  • Low parasitic inductance
  • Low profile (<0.7mm)
  • Reduced switching and conduction losses
  • Very low on-resistance RDS(on)
  • Superior thermal resistance

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
23A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.0275ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
32W
Transistor Case Style:
SuperSOT
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Alternative Energy;
  • Consumer Electronics;
  • Communications & Networking;
  • Computers & Computer Peripherals;
  • Power Management;
  • LED Lighting;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0002

Associated Products